发明名称 |
Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device |
摘要 |
Methods are generally provided for forming a conductive oxide layer (14) on a substrate (12). In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (14) on a substrate (12) at a sputtering temperature from about 50° C to about 250° C, and annealing the transparent conductive oxide layer (14) at an anneal temperature of about 450° C to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device (10). |
申请公布号 |
EP2372776(A2) |
申请公布日期 |
2011.10.05 |
申请号 |
EP20110159251 |
申请日期 |
2011.03.22 |
申请人 |
PRIMESTAR SOLAR, INC |
发明人 |
FELDMAN-PEABODY, SCOTT DANIEL;DRAYTON, JENNIFER ANN |
分类号 |
H01L31/073;H01L31/0224;H01L31/048;H01L31/18 |
主分类号 |
H01L31/073 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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