| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method with the excellent exposure latitude (EL) and focus margin (DOF) capable of reducing the line width irregularity (LWR) and residual defect, a chemically amplified resist composition and a resist film.SOLUTION: The pattern forming method includes: (α) a step of forming a film with a substantially alkaline-insoluble resin (A) with a polarity increased by action of an acid for reducing the solubility to a developing solution including an organic solvent, a nonionic compound (B) for generating an acid by radiation of an active ray or a radioactive, and a chemically amplified resist composition (C) including a solvent; (β) a step of exposing the film; and (γ) a step of developing the film with a developing solution including an organic solvent. Also, a chemically amplified resist composition used for the pattern forming method, and a resist film formed with the chemically amplified resist composition are provided. |
