发明名称 FABRICATION METHOD OF ELECTRONIC DEVICES BASED ON ALIGNED HIGH ASPECT RATIO NANOPARTICLE NETWORKS
摘要 <p>A layer of high aspect ratio nanoparticles is disposed on a surface of a substrate under the influence of an electrical field applied on the substrate. To create the electrical field, a voltage is applied between a pair of electrodes arranged near the substrate or on the substrate, and the high aspect ratio nanoparticles disposed on the substrate are at least partially aligned along direction(s) of the applied electrical field. The high aspect ratio nanoparticles are grown from catalyst nanoparticles in an aerosol, and the aerosol is directly used for forming the nanoparticle layer on the substrate at room temperature. The nanoparticles may be carbon nanotubes, in particular single wall carbon nanotubes. The substrate with the layer of aligned high aspect ratio nanoparticles disposed thereon can be used for fabricating nanoelectronic devices.</p>
申请公布号 EP2371015(A1) 申请公布日期 2011.10.05
申请号 EP20090836121 申请日期 2009.12.01
申请人 NOKIA CORPORATION 发明人 ERMOLOV, VLADIMIR
分类号 H01L51/00;B82B3/00;B82Y40/00;H01L51/05;H01L51/30;H01L51/40 主分类号 H01L51/00
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