发明名称 Memory device, memory system having the same, and programming method of a memory cell
摘要 A method of writing multi-bit data to a semiconductor memory device with memory cells storing data defined by a threshold value, the method comprising, for each memory cell, writing a least significant bit, verifying completion of writing the least significant bit, verifying including comparing a written value to one of a low least significant bit verification value and a high least significant bit verification value, and writing a next significant bit upon completion of writing the least significant bit.
申请公布号 US8031517(B2) 申请公布日期 2011.10.04
申请号 US20090461036 申请日期 2009.07.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM HO JUNG;PARK CHUL WOO;KANG SANG BEOM;CHOI HYUN HO;AHN SEUNG EON
分类号 G11C11/00 主分类号 G11C11/00
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