发明名称 Material and method for photolithography
摘要 A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.
申请公布号 US8029969(B2) 申请公布日期 2011.10.04
申请号 US20070748322 申请日期 2007.05.14
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 YEH HSIAO-WEI;SHIH JEN-CHIEH;CHEN JIAN-HONG
分类号 G03F7/039;G03C1/73;G03F7/038;G03F7/11 主分类号 G03F7/039
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