发明名称 |
Material and method for photolithography |
摘要 |
A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.
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申请公布号 |
US8029969(B2) |
申请公布日期 |
2011.10.04 |
申请号 |
US20070748322 |
申请日期 |
2007.05.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEH HSIAO-WEI;SHIH JEN-CHIEH;CHEN JIAN-HONG |
分类号 |
G03F7/039;G03C1/73;G03F7/038;G03F7/11 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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