发明名称 Semiconductor device and method of conforming conductive vias between insulating layers in saw streets
摘要 A semiconductor device is made by disposing a plurality of semiconductor die on a carrier and creating a gap between each of the semiconductor die. A first insulating material is deposited in the gap. A portion of the first insulating material is removed. A conductive layer is formed over the semiconductor die. A conductive lining is conformally formed on the remaining portion of the first insulating material to form conductive via within the gap. The conductive vias can be tapered or vertical. The conductive via is electrically connected to a contact pad on the semiconductor die. A second insulating material is deposited in the gap over the conductive lining. A portion of the conductive via may extend outside the first and second insulating materials. The semiconductor die are singulated through the gap. The semiconductor die can be stacked and interconnected through the conductive vias.
申请公布号 US8030136(B2) 申请公布日期 2011.10.04
申请号 US20080121682 申请日期 2008.05.15
申请人 STATS CHIPPAC, LTD. 发明人 PAGAILA REZA A.;CHUA LINDA PEI EE;DO BYUNG TAI
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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