发明名称 Active balun with stacked structure
摘要 An active balun with a stacked structure includes: a first amplification unit including a first transistor having a first terminal connected with a first input terminal, a second terminal connected with a power voltage terminal, and a third terminal connected with an output terminal; a second amplification unit including a second transistor having a first terminal connected with a second input terminal, a second terminal connected with the output terminal, and a third terminal connected with a ground; and a capacitance matching unit connected between the first terminal and the third terminal of the first transistor and having a pre-set matching capacitance.
申请公布号 US8031004(B2) 申请公布日期 2011.10.04
申请号 US20090646351 申请日期 2009.12.23
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 JEONG MOON SUK;NA YOO SAM
分类号 H03F3/04 主分类号 H03F3/04
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