| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a NAND-type nonvolatile semiconductor memory device wherein variations in the thresholds caused by an inter-cell interference effect are suppressed. <P>SOLUTION: The NAND-type nonvolatile semiconductor memory device includes multiple memory cells MT, arranged in a matrix form in columnar and row directions, and a write circuit 8 for writing data into the memory cells. The memory cells are connected in series in the column direction and are connected to common word lines in the row direction. The memory cells include first memory cells and second memory cells having a smaller dimension than the first memory cells in the column direction. The write circuit writes data in a predetermined first memory cell among memory cells arranged in the same column and then in another first memory cell. After that, the write circuit writes data in a second memory cell. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
