| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor structure that can suppress thermal stress in a substrate length direction, generated on interfaces between a silicon substrate and a filler and between a compound semiconductor and the filler. <P>SOLUTION: The semiconductor structure includes: the silicon substrate; a nitride semiconductor formed on the silicon substrate and having a groove portion; and oxide silicon charged in the groove portion, wherein the volume of the oxide silicon is 1.9 to 4.1 times as large as that of the nitride semiconductor. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
