发明名称 DEVELOPING SOLUTION FOR PHOTOLITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a developing solution for photolithography, in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. SOLUTION: The developing solution for photolithography contains (A) tetrabutylammonium hydroxide, and at least one selected from the group consisting of (B1) alcohol, (B2) a surfactant, and (B3) a clathrate. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011191734(A) 申请公布日期 2011.09.29
申请号 JP20100240037 申请日期 2010.10.26
申请人 TOKYO OHKA KOGYO CO LTD 发明人 KUMAGAI TOMOYA;UENO NAOHISA;KOSHIYAMA JUN
分类号 G03F7/32;H01L21/027 主分类号 G03F7/32
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