| 摘要 |
A non-volatile semiconductor memory device and a method of manufacturing the same of the embodiments are provided. The non-volatile semiconductor memory device includes: drain contact plugs formed in memory cell regions and having bottom ends joined to drain diffusion layers of the respective memory cells; a local interconnect provided to extend in a WL direction across the memory cell regions and a shunt region, and having a bottom end joined commonly to plural source diffusion layers; drain via plugs formed in the memory cell regions and having bottom ends joined to the top ends of the respective drain contact plugs; and a power supply via for source formed in the shunt region to extend in a BL direction, and having a bottom end joined to the top end of the local interconnect.
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