| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a gallium oxide single crystal, by which the reproducibility of the content of a dopant for each gallium oxide single crystal is improved. SOLUTION: For example, in the production of a gallium oxide single crystal by an EFG (Edge Defined Film Fed Growth) method, after adding a dopant oxide to a raw material containing gallium oxide, wherein the dopant oxide has such a melting point that the difference between the melting point of the raw material and the melting point thereof is within±300°C, the resulting mixture is melted in a crucible 3, then a seed crystal 10 is brought into contact with the resulting melt 2, and the gallium oxide single crystal 13 is grown from the melt 2. The control of the evaporation amount of the dopant to the raw material becomes easy by setting the difference between the melting point of the raw material containing gallium oxide and the melting point of the dopant oxide being added to the raw material to be within±300°C. The control of the dopant content contained in the gallium oxide single crystal to be crystal-grown is therefore facilitated. COPYRIGHT: (C)2011,JPO&INPIT |
