| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a silicon carbide single crystal, which can provide a good-quality, large-diameter single crystal by reducing the temperature difference between the central portion and the peripheral portion of a growing crystal while maintaining the temperature gradient in the growing crystal being equal to or more than a predetermined value during the crystal growth. SOLUTION: The manufacturing apparatus 1 of silicon carbide comprises a crucible 9 having a crucible body 5 accommodating a raw material 15 for sublimation, and a lid body 3 installed with a seed crystal attaching section 21 where a seed crystal is attached at a position opposing to the raw material 15 for sublimation, and is heated from the outer periphery of the crucible 9, wherein with respect to the seed crystal attaching section 21 of the lid body 3, a central portion 31 arranged on the inner peripheral side has a higher heat conductivity than an outer portion 32 arranged on the outer peripheral side. COPYRIGHT: (C)2011,JPO&INPIT
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