| 摘要 |
Provided are a negative type resist composition, by which a pattern having a high sensitivity, a high resolving power and a low line edge roughness can be obtained in pattern-formation under electron beam- or EUV-irradiation, a method for producing a relief pattern using said resist composition, and an electronic part using said resist composition. The negative type resist composition, which contains a phenolic compound (A) having a molecular weight of 400-2500 and carrying two or more, per molecule, of phenolic hydroxyl groups and one or more, per molecule, of one or more kinds of substituents selected from the group consisting of a hydroxymethyl group and alkoxymethyl groups, said substituents being attached to the ortho-position of the phenolic hydroxyl group, wherein the content of said phenolic compound (A) is equal to or greater than 70 wt% relative to the total solid matters contained in the negative type resist composition. |
