| 摘要 |
A method is provided for calibrating a high-frequency, measuring device so as to accurately measure high-frequency parameters within a chamber. A calibration parameter is calculated from impedance of a first set of three reference loads measured by a high-frequency measuring device and the true values of those impedances. A calibration parameter is calculated from an S parameter measured between a connection point where the high-frequency measuring device is connected and the inside of the chamber of a plasma processing device. An impedance within the chamber is calculated from a voltage signal and a current signal calibrated using the above calibration parameters. A second set of three reference loads, which include the impedance calculated in Step 5 and encompass a range narrower than that encompassed by the first set of three reference loads, is determined. Another calibration parameter is calculated from impedances of the second set of three reference loads measured by the high-frequency measuring device and the true values of those impedances, and a detected voltage signal and a detected current signal are calibrated using the above calibration parameters.
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