| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element improved in light emitting luminous intensity. <P>SOLUTION: The semiconductor light emitting element has a substrate 2, a light emitting layer 13 composed of a light emitting layer composed of a first semiconductor layer 5 and an active layer 6 and a second semiconductor layer 7 formed on the substrate 2, a DBR (distribution bragg reflector) layer 4 formed between the substrate 2 and the light emitting layer 13, an underside electrode 10 arranged on the undersurface of the substrate 2, and an upper electrode 11 arranged on the light emitting layer 13, and has a DBR block 12 formed on the light emitting layer 13 and the upper electrode 11 arranged so as to cover the DBR block 12. <P>COPYRIGHT: (C)2011,JPO&INPIT |
