发明名称 |
Electrode for silicon carbide, silicon carbide semiconductor element, silicon carbide semiconductor device and method for forming electrode for silicon carbide |
摘要 |
An electrode for silicon carbide includes a silicide region which is provided in contact with a surface of a silicon carbide (SiC) layer and a carbide region which is provided on the silicide region. The silicide region contains a silicide of a first metal in more amount than a carbide of a second metal whose free energy of carbide formation is less than that of silicon (Si). The carbide region contains the carbide of the second metal in more amount than the silicide of the first metal.
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申请公布号 |
US2011233560(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US201113065222 |
申请日期 |
2011.03.16 |
申请人 |
ADVANCED INTERCONNECT MATERIALS, LLC |
发明人 |
KOIKE JUNICHI;SHIBATOMI AKIHIRO;JUNG KUNHWA;SUTOU YUJI |
分类号 |
H01L29/12;B82Y40/00;B82Y99/00;H01L21/283;H01L23/48 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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