| 摘要 |
The present disclosure relates to a semiconductor device that has a first semiconductor structure that is grown to form a non-planar growth surface. The non-planar growth surface is formed from multiple facets and provides a defined contour. The defined contour may include, but is not limited to a corrugated contour or a pyramidal contour. A second semiconductor structure is grown over the non-planar growth surface of the first semiconductor structure, and as such, the second semiconductor structure is non-planar and follows the defined contour of the non-planar growth surface of the first semiconductor structure. The first and second semiconductor structures may form the foundation for various types of electrical and optoelectrical semiconductor devices, such as diodes, transistors, thyristors, and the like.
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