发明名称 Element substrate and light-emitting device
摘要 A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.
申请公布号 US8026877(B2) 申请公布日期 2011.09.27
申请号 US20040807545 申请日期 2004.03.24
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OSAME MITSUAKI;ANZAI AYA;YAMAZAKI YU;FUKUMOTO RYOTA
分类号 G09G3/32;G09G3/14;G09G3/20;G09G3/30;H01L21/77;H01L27/12;H01L27/32;H05B33/00;H05B33/14 主分类号 G09G3/32
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