| 摘要 |
<p>While creating a vacuum within a processing container (1) using an exhaust device (24), ozone-containing gas with a 50% or higher volume ratio of O3 to a total volume of inert gas, and O2 and O3, is introduced at a predetermined flow rate to the inside of the processing container (1) from an inert gas supply source (19a) and an ozone-containing gas supply source (19b) in a gas supply system (18), via a gas introduction portion (15). The processing container (1) is radiated with microwaves at a predetermined frequency such as 2.45 GHz generated by a microwave generating device (39) from a flat antenna via a transmission plate (28) thereby transforming the inert gas and ozone-containing gas into plasma. The microwave-excited plasma forms the silicon oxide film on the wafer W surface. It is also acceptable to supply to a stage (2) with high-frequency electric power of a predetermined frequency and power from a high-frequency power source (44) during plasma oxidation.</p> |
