| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which an insulating film is surely left in a trench, and a method of manufacturing the same. <P>SOLUTION: After a gate electrode is formed in the trench, an insulating film partially including an insulating film with reflow properties is formed and its surface is flattened. The flattened surface is polished thereafter by a CMP method and the trench is thereby filled with the insulating film. At this time, the surface of a field oxide film is also polished. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
