| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a high SN ratio even when pixels are made to be fine. <P>SOLUTION: A solid-state imaging device includes: a plurality of pixels 201, which are provided on a semiconductor substrate of a first conductivity type, and each of which has a semiconductor region 201a of a second conductivity type in which light incident from a first surface side of the semiconductor substrate is converted into signal charges to be stored; a readout circuit provided on a second surface side opposite to the first surface of the semiconductor substrate and configured to read out signal charges stored in pixels; fine metal structures 250 provided periodically on a surface of the semiconductor region on a side on which the light is incident; and an insulating film 236a provided between the fine metal structures and semiconductor region. <P>COPYRIGHT: (C)2011,JPO&INPIT |
