发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS
摘要 An excellent type of a film is realized by modifying conventional types of films. A carbonitride film of a predetermined thickness is formed on a substrate by performing, a predetermined number of times, a cycle including the steps of: supplying a source gas into a process vessel accommodating the substrate under a condition where a CVD reaction is caused, and forming a first layer including an element on the substrate; supplying a carbon-containing gas into the process vessel to form a layer including carbon on the first layer, and forming a second layer including the element and the carbon; supplying the source gas into the process vessel under a condition where a CVD reaction is caused to additionally form a layer including the element on the second layer, and forming a third layer including the element and the carbon; and supplying a nitrogen-containing gas into the process vessel to nitride the third layer, and forming a carbonitride layer serving as a fourth layer including the element, the carbon, and nitrogen.
申请公布号 US2011230057(A1) 申请公布日期 2011.09.22
申请号 US201113047367 申请日期 2011.03.14
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 TAKASAWA YUSHIN;HIROSE YOSHIRO;KAMAKURA TSUKASA;KAGA YUKINAO
分类号 H01L21/31;C23C16/36;C23C16/44;C23C16/52 主分类号 H01L21/31
代理机构 代理人
主权项
地址