发明名称 PROCESS SIMULATION METHOD, SEMICONDUCTOR DEVICE DESIGNING METHOD AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
摘要 According to one embodiment, a method of simulating a manufacturing process of a structure including adjacent components, the method includes causing a computer to perform operations of: importing mesh and material data set for each component; specifying, as a calculation target, a region in a first component in which impurities are to be diffused among the components; setting a virtual film of a desired thickness in contact with the region whose material is the same as that of a second component in contact with the specified calculation target; setting boundary conditions at interface between the region and the virtual film, based on the material data; incorporating the boundary conditions into diffusion equations to solve the diffusion equations of the region and the virtual film; and bringing data on the concentration of impurities of the region obtained by the calculation into data on the structure before the specification of the region.
申请公布号 US2011230992(A1) 申请公布日期 2011.09.22
申请号 US201113038562 申请日期 2011.03.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SEKINO YUKI;ITO SANAE
分类号 G06F17/50;G06F17/11 主分类号 G06F17/50
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