| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device in which a reflection electrode layer is prevented from deterioration, and also to provide a method for manufacturing the same. <P>SOLUTION: The semiconductor light-emitting device is equipped with: a semiconductor layer including a light-emitting layer, a first electrode provided on a second major surface of the semiconductor layer; a second electrode provided on the second major surface of the semiconductor layer and containing a silver layer; an insulating film provided on the second major surface side of the semiconductor layer; a first interconnection provided on a surface opposite to the semiconductor layer in the insulating film; a second interconnection provided on the opposite surface of the semiconductor layer in the insulating film; a barrier metal layer provided between the second electrode and the insulating film and between the second electrode and the second interconnection to cover the second electrode and made of a metal different from those of the second electrode and the first and second interconnections; a first metal pillar provided on the opposite surface of the first electrode in the first interconnection; a second metal pillar provided on the opposite surface of the second electrode in the second interconnection; and a resin for covering the periphery of the first and second metal pillars. <P>COPYRIGHT: (C)2011,JPO&INPIT |
