| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element using an ITON layer for a transparent conductor and achieving low drive voltage, high luminous efficiency, and uniformed luminous intensity distribution. <P>SOLUTION: The semiconductor light emitting element includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer and having an uppermost part composed of a p-type GaN layer; an ITON (indium-tin-oxynitride) layer formed on the p-type GaN layer; an ITO (indium-tin-oxide) layer formed on the ITON layer; a first metal electrode formed at a part on the ITO layer; and a second metal electrode connected with the n-type semiconductor layer to be formed. <P>COPYRIGHT: (C)2011,JPO&INPIT |
