| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly-efficient semiconductor light-emitting element. <P>SOLUTION: The semiconductor light-emitting element includes a first conductivity-type first semiconductor layer 10, a second conductivity-type second semiconductor layer 20; a luminous layer 30 provided between the first semiconductor layer 10 and the second semiconductor layer 20; a third semiconductor layer 15, that is provided at a side opposite to the luminous layer 30 of the first semiconductor layer 10, has an impurity concentration lower than that of the first semiconductor layer 10, and includes an opening for exposing one portion of the first semiconductor layer 10; and a first electrode 40, abutting against the first semiconductor layer 10 via an opening 18. The third semiconductor layer 15 is provided on a surface at a side opposite to the first semiconductor layer 10 and further includes a surface-roughening part 17, including irregularities 17p larger than a wavelength in the third semiconductor layer 15 of a peak wavelength of emission light radiated from the luminous layer 30. <P>COPYRIGHT: (C)2011,JPO&INPIT |
