| 摘要 |
PROBLEM TO BE SOLVED: To provide a driving method of a self-oscillation type semiconductor laser element for making a generated optical pulse shorter and peak output higher without causing a trouble such as heat generation and deterioration. SOLUTION: The self-oscillation type semiconductor laser element is equipped with: a laminated structure obtained by sequentially laminating a first compound semiconductor layer formed of a GaN-based compound semiconductor, a third compound semiconductor layer constituting a light emitting region and a saturable absorption region and a second compound semiconductor; a second electrode formed on the second compound semiconductor layer; and a first electrode which is electrically connected to the first compound semiconductor layer. The second electrode is isolated into: a first part for making a forward bias state by making current flow to the first electrode via the light emitting region; and a second part for applying an electric field to the saturable absorption region by an isolation groove. In the driving method of the self-oscillation type semiconductor laser element, current having a current value in which kink occurs or above in optical output-current characteristic, is made to flow to the first part of the second electrode. COPYRIGHT: (C)2011,JPO&INPIT |
