发明名称 Silicon-on-Insulator High Power Amplifiers
摘要 Illustrative embodiments of a power amplifier are disclosed which include a plurality of amplifier cells, each having an input and an output. The plurality of amplifier cells are formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series. Each of the plurality of amplifier cells may comprise a first transistor that is electrically insulated from the semiconductor substrate and a first feedback resistor configured to dynamically bias the first transistor.
申请公布号 US2011227648(A1) 申请公布日期 2011.09.22
申请号 US201113044989 申请日期 2011.03.10
申请人 发明人 MOHAMMADI SAEED;HELMI SULTAN R.;CHEN JING-HWA;ROBISON ANDREW J.
分类号 H03F3/45;H03F1/22;H03F3/16 主分类号 H03F3/45
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