发明名称 |
Silicon-on-Insulator High Power Amplifiers |
摘要 |
Illustrative embodiments of a power amplifier are disclosed which include a plurality of amplifier cells, each having an input and an output. The plurality of amplifier cells are formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series. Each of the plurality of amplifier cells may comprise a first transistor that is electrically insulated from the semiconductor substrate and a first feedback resistor configured to dynamically bias the first transistor. |
申请公布号 |
US2011227648(A1) |
申请公布日期 |
2011.09.22 |
申请号 |
US201113044989 |
申请日期 |
2011.03.10 |
申请人 |
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发明人 |
MOHAMMADI SAEED;HELMI SULTAN R.;CHEN JING-HWA;ROBISON ANDREW J. |
分类号 |
H03F3/45;H03F1/22;H03F3/16 |
主分类号 |
H03F3/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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