发明名称 APPARATUS FOR PRODUCING SINGLE CRYSTAL, METHOD FOR FIXING SEED CRYSTAL, AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for producing a single crystal, producible of a high quality single crystal in the process of producing a single crystal by a sublimation recrystallization method, and to provide a method for fixing a seed crystal, by which occurrence of structural defects such as cracks in a seed crystal can be prevented. SOLUTION: The apparatus 1 for producing a single crystal includes a seed crystal 10 as a growth base for growing a single crystal and a crucible 100 housing a sublimation raw material 20 to be used for growing the single crystal. The crucible 100 comprises a reaction vessel 110 having an opening 111 and housing the sublimation raw material 20, a lid 120 attached to the opening 111, and a holding part 130 holding the seed crystal 10. The seed crystal 10 has a protective layer 15 in a side close to the lid 120 for protecting the seed crystal 10. The holding part 130 has a contact face 143 to be brought into contact with only a part of the opposite side (lower face 10B) of the seed crystal 10 to the side (upper face 10A) close to the lid 120. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011184209(A) 申请公布日期 2011.09.22
申请号 JP20100047895 申请日期 2010.03.04
申请人 BRIDGESTONE CORP 发明人 OKUNO KENICHIRO
分类号 C30B29/36;C30B23/06 主分类号 C30B29/36
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