| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using solder bars for external circuit connections. <P>SOLUTION: The solderable front metal structures 140a and 140b include a tri-metal such as TiNiAg, and are configured to expose source and drain contacts of the HEMT as alternating elongated digits or bars. Additionally, a single package may integrate a plurality of such HEMTs in which the front metal structures 140a and 140b expose alternating interdigitated source and drain contacts. This configuration may be advantageous for DC-DC power conversion circuit designs using III-nitride devices. By using solder bars for external circuit connections, lateral conduction is enabled, thereby reducing on-resistance Rdson of the device. <P>COPYRIGHT: (C)2011,JPO&INPIT |
