发明名称 GATE DRIVE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a gate drive circuit which drives a switch element including a wideband gap semiconductor with a simple configuration. SOLUTION: The gate drive circuit includes a switch element including a wideband gap semiconductor having a drain, a source, and a gate, and connected between the gate and a signal which drives the gate through a series circuit of a capacitor and a resistor, and a gate voltage clamp circuit provided between the drain and the gate and composed of a diode and a voltage limit circuit. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011188178(A) 申请公布日期 2011.09.22
申请号 JP20100050420 申请日期 2010.03.08
申请人 SANKEN ELECTRIC CO LTD 发明人 MACHIDA OSAMU
分类号 H03K17/08 主分类号 H03K17/08
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