发明名称 |
MULTILAYERED CAP BARRIER IN MICROELECTRONIC INTERCONNECT STRUCTURES |
摘要 |
Structures having low-k multilayered dielectric diffusion barrier layer having at least one low-k sublayer and at least one air barrier sublayer are described herein. The multilayered dielectric diffusion barrier layer are diffusion barriers to metal and barriers to air permeation. Methods and compositions relating to the generation of the structures are also described. The advantages of utilizing these low-k multilayered dielectric diffusion barrier layer is a gain in chip performance through a reduction in capacitance between conducting metal features and an increase in reliability as the multilayered dielectric diffusion barrier layer are impermeable to air and prevent metal diffusion.
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申请公布号 |
US2011226981(A1) |
申请公布日期 |
2011.09.22 |
申请号 |
US201113117536 |
申请日期 |
2011.05.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HEDRICK JEFFREY C.;HUANG ELBERT E. |
分类号 |
C08L83/14;C08L83/16;H01L;H01L21/28;H01L21/312;H01L21/314;H01L21/3205;H01L21/4763;H01L21/768;H01L23/48;H01L23/522;H01L23/532 |
主分类号 |
C08L83/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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