发明名称 |
PHOTOMASK BLANK, PHOTOMASK, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
[Object] A photomask blank for use in producing a photomask for exposure with an ArF excimer laser. The photomask blank is intended to be applied to the 32-nm DRAM half-pitch (hp) and succeeding generations in the semiconductor design rule. [Solution] The photomask blank is for use in producing a photomask to which an exposure light having a wavelength not longer than 200 nm is applied. The photomask blank is characterized by comprising a transparent substrate, a light-shielding film formed on the transparent substrate and containing molybdenum and silicon, and an etching mask film formed directly on the light-shielding film and containing chromium. The photomask blank is further characterized in that the light-shielding film comprises a light-shielding layer and an antireflection layer which have been disposed in this order from the transparent substrate side, the light-shielding layer having a molybdenum content of 9-40 at %, and that the etching mask film has a chromium content of 45 at % or lower.
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申请公布号 |
US2011229807(A1) |
申请公布日期 |
2011.09.22 |
申请号 |
US200913121851 |
申请日期 |
2009.09.30 |
申请人 |
HOYA CORPORATION |
发明人 |
HASHIMOTO MASAHIRO;KOMINATO ATSUSHI |
分类号 |
G03F1/00;G03F1/54;G03F1/80;G03F7/20 |
主分类号 |
G03F1/00 |
代理机构 |
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