发明名称 SINGLE CRYSTAL PULLING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a single crystal pulling apparatus, wherein the leakage of a melt from a crucible is detected with high sensitivity and high precision. SOLUTION: The single crystal pulling apparatus for producing a single crystal ingot by a Czochralski method includes: a crucible for accommodating a raw material melt; a main chamber for housing a heater for heating the raw material melt; a leaked melt receiving tray which is disposed on the bottom of the main chamber and accommodates the melt leaking from the crucible; and a detector which is arranged at the leaked melt receiving tray and detects the leakage of the melt. The detector has a metal member laid on the upper surface of the leaked melt receiving tray and a resistance measuring means for measuring the electric resistance of the metal member. The leakage of the melt is detected by the change of the electric resistance of the metal member measured by the resistance measuring means. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011184238(A) 申请公布日期 2011.09.22
申请号 JP20100051261 申请日期 2010.03.09
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 URANO MASAHIKO;KUDO HIDEO
分类号 C30B29/06;C30B15/00 主分类号 C30B29/06
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