| 摘要 |
PROBLEM TO BE SOLVED: To suppress temperature control variation of a substrate and to film-deposit a film of high quality with satisfactory reproducibility. SOLUTION: In a film-deposition device having a film deposition container, a substrate holding part holding a substrate, a film-deposition source disposed in a position opposed to the substrate and a shutter which is disposed between the substrate holding part and the film-deposition source and can be opened and closed, the shutter 20 is constituted of a material radiating heat generated from the film-deposition source and plasma to the substrate side. The shutter material having a radiation ratio of 0.70 or above at a film-deposition temperature is used. COPYRIGHT: (C)2011,JPO&INPIT |
