| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress a failure, such as short-circuiting and leakage, in a photoelectric conversion device manufactured by a solid phase growth method by adding catalyst elements. <P>SOLUTION: A catalyst material for promoting crystallization of silicon is selectively added to a second silicon semiconductor layer formed over a first silicon semiconductor layer having one conductivity type, the second silicon semiconductor layer is partly crystallized by performing a heating process, a third silicon semiconductor layer having an opposite conductivity type of the one conductivity type is stacked, and element isolation is performed at a region in the second silicon semiconductor layer to which no catalyst materials are added, thus preventing re-diffusion of a remaining catalyst material and suppressing defects, such as short-circuiting and leakage. <P>COPYRIGHT: (C)2011,JPO&INPIT |
