SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR

摘要

Disclosed is a sputtering target that makes it possible to use sputtering to form a good copper-gallium film with sodium added thereto. Also disclosed is a method for manufacturing said sputtering target. The disclosed sputtering target contains, by atomic percent, 20-40% gallium, 0.05-2% sodium, and 0.025-1.0% sulfur, with the remainder comprising copper and unavoidable impurities. The disclosed method for fabricating said sputtering target includes a step in which either a mixture of Na2S powder and a Cu-Ga alloy powder or a mixture of Na2S powder, a Cu-Ga alloy powder, and pure copper powder is either hot-pressed in a vacuum or inert gas atmosphere or sintered via hot isostatic pressing.