摘要 |
<p>A semiconductor light emitting device includes: a substrate (101); a plurality of light emitting cells (C1,C2,C3) arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer (102), a second-conductivity-type semiconductor layer (104), and an active layer (103) disposed therebetween to emit blue light; an interconnection structure (106) electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part (109) formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part (109R) having a red light conversion material and a green light conversion part (109G) having a green light conversion material.</p> |