发明名称 |
Semiconductor device and method of manufacturing the semiconductor device |
摘要 |
In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5. |
申请公布号 |
US8023055(B2) |
申请公布日期 |
2011.09.20 |
申请号 |
US20080258046 |
申请日期 |
2008.10.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
NAKAJIMA SETSUO;ARAI YASUYUKI |
分类号 |
G02F1/136;H01L29/786;G02F1/1365;G02F1/1368 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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