发明名称 |
Method for producing single crystal silicon solar cell and single crystal silicon solar cell |
摘要 |
A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.
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申请公布号 |
US8021910(B2) |
申请公布日期 |
2011.09.20 |
申请号 |
US20070907902 |
申请日期 |
2007.10.18 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
ITO ATSUO;AKIYAMA SHOJI;KAWAI MAKOTO;TANAKA KOICHI;TOBISAKA YUUJI;KUBOTA YOSHIHIRO |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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地址 |
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