发明名称 Method for producing single crystal silicon solar cell and single crystal silicon solar cell
摘要 A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.
申请公布号 US8021910(B2) 申请公布日期 2011.09.20
申请号 US20070907902 申请日期 2007.10.18
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 ITO ATSUO;AKIYAMA SHOJI;KAWAI MAKOTO;TANAKA KOICHI;TOBISAKA YUUJI;KUBOTA YOSHIHIRO
分类号 H01L21/00 主分类号 H01L21/00
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