发明名称 Methods and apparatus for insitu analysis of gases in electronic device fabrication systems
摘要 Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.
申请公布号 US8020427(B2) 申请公布日期 2011.09.20
申请号 US20100833936 申请日期 2010.07.09
申请人 APPLIED MATERIALS, INC. 发明人 CARLSON DAVID K.;KUPPURAO SATHEESH
分类号 G01N7/00 主分类号 G01N7/00
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