发明名称 |
TEMPERATURE CONTROL SYSTEM, TEMPERATURE CONTROL METHOD, PLASMA PROCESSING APPARATUS AND COMPUTER STORAGE MEDIUM |
摘要 |
There is provided a temperature control system configured to control a temperature of a temperature control target member of a processing chamber for performing a plasma process on a substrate therein. The temperature control system includes a heating unit configured to heat the temperature control target member; a cooling unit configured to cool the temperature control target member by circulating a liquid coolant; and a flow rate control unit configured to control a flow rate of the coolant into the temperature control target member by the cooling unit to a first flow rate when plasma is generated within the processing chamber and to a second flow rate lower than the first flow rate when plasma is not generated within the processing chamber. |
申请公布号 |
US2011220288(A1) |
申请公布日期 |
2011.09.15 |
申请号 |
US201113042799 |
申请日期 |
2011.03.08 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KOBAYASHI ATSUSHI;WAKAI HIDEKI |
分类号 |
C23F1/08;F25B29/00 |
主分类号 |
C23F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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