发明名称 Manufacturing Method of Semiconductor Device
摘要 A process for burying a tungsten member into a blind hole formed in a wafer, in which blind hole a through via is to be made. Film-formation (for forming the tungsten member) is carried out to position, at the periphery of the wafer, the outer circumference of the tungsten member inside the outer circumference of a barrier metal beneath the tungsten film. This process makes it possible to bury the tungsten member, which may be relatively thin, into the blind hole, which may be relatively large, so as to decrease a warp of the wafer and further prevent an underlying layer beneath the tungsten member from being peeled at the periphery of the wafer.
申请公布号 US2011221063(A1) 申请公布日期 2011.09.15
申请号 US201113046331 申请日期 2011.03.11
申请人 RENESAS ELECTRONICS CORPORATION 发明人 ICHINOSE KAZUHITO;KIHARA KOTARO;MURATA TATSUNORI
分类号 H01L23/48;H01L21/768 主分类号 H01L23/48
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