发明名称 FILM DEPOSITION APPARATUS, SYSTEM AND FILM DEPOSITION METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To deposit metal nano-particles without using a dispersion stabilizer. <P>SOLUTION: The film deposition apparatus includes: a treating container 150 in which the vacuum state is maintained and a wafer W is mounted therein; an ultrasonic atomizer 110 which atomizes a metal salt solution with ultrasonic waves and releases droplets Mb of atomized metal salt solution into the treating container 150; and a temperature adjusting element 152 which is arranged in a space A through which the released droplets Mb of the metal salt solution pass when the droplets move toward the wafer W in the treating container 150 and thermally decomposes the released foggy droplets Mb of the metal salt solution. Thereby, metal nano-particles Ma generated from the foggy droplets Mb of the metal salt solution by thermal decomposition are film-deposited onto the wafer W. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011178635(A) 申请公布日期 2011.09.15
申请号 JP20100046426 申请日期 2010.03.03
申请人 TOKYO ELECTRON LTD 发明人 HOSHINO SATOHIKO
分类号 C01B31/02;C23C16/44 主分类号 C01B31/02
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