SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SAME

摘要

The disclosed semiconductor device is provided with: a first conductive type drift diffusion region (10); a second conductive type body diffusion region (2); a first conductive type source diffusion region (6); an insulating film (14) which is embedded in a trench formed in the upper part of the drift diffusion region (10) and is formed in a location that is separate from the body diffusion region (2); a first conductive type drain diffusion region (7), which is formed in the upper part of the drift diffusion region (10) and is adjacent to the insulating film (14) in the opposite direction to the source diffusion region (6); and a gate electrode (5) which is formed so as to go from above the body diffusion region (2), over the drift diffusion region (10) and up to above the insulating film (14). The drift diffusion region (10) has a substrate inner region (11), and a surface region (12) which contains first conductive type impurities at a higher concentration than the substrate inner region (11).