发明名称 |
Si NANOWIRE IN WHICH ZERO-DIMENSIONAL STRUCTURE IS SCATTERED IN ONE-DIMENSIONAL STRUCTURE AND METHOD FOR PRODUCING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a silicon nanowire in which spherical silicon nanocrystals are scattered internally and which can be used as a luminescent material. SOLUTION: The silicon nanowire is obtained by implanting O<SP>2+</SP>ions into a crystalline silicon nanowire of a one-dimensional structure, depositing silicon nanocrystals within the nanowire by annealing the nanowire in an inert gas atmosphere, and carrying out hydrogen plasma treatment with heating. COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011178585(A) |
申请公布日期 |
2011.09.15 |
申请号 |
JP20100042439 |
申请日期 |
2010.02.26 |
申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
FUKADA NAOKI;MURAKAMI KOICHI |
分类号 |
C01B33/02;B82B1/00;B82B3/00;C23C14/48;C23C14/58 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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