发明名称 Si NANOWIRE IN WHICH ZERO-DIMENSIONAL STRUCTURE IS SCATTERED IN ONE-DIMENSIONAL STRUCTURE AND METHOD FOR PRODUCING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a silicon nanowire in which spherical silicon nanocrystals are scattered internally and which can be used as a luminescent material. SOLUTION: The silicon nanowire is obtained by implanting O<SP>2+</SP>ions into a crystalline silicon nanowire of a one-dimensional structure, depositing silicon nanocrystals within the nanowire by annealing the nanowire in an inert gas atmosphere, and carrying out hydrogen plasma treatment with heating. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011178585(A) 申请公布日期 2011.09.15
申请号 JP20100042439 申请日期 2010.02.26
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 FUKADA NAOKI;MURAKAMI KOICHI
分类号 C01B33/02;B82B1/00;B82B3/00;C23C14/48;C23C14/58 主分类号 C01B33/02
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