发明名称 |
SEMICONDUCTOR DEVICE HAVING INSULATED GATE SEMICONDUCTOR ELEMENT, AND INSULATED GATE BIPOLAR TRANSISTOR |
摘要 |
A semiconductor device having an IGBT includes: a substrate; a drift layer and a base layer on the substrate; trenches penetrating the base layer to divide the base layer into base parts; an emitter region in one base part; a gate element in the trenches; an emitter electrode; and a collector electrode. The one base part provides a channel layer, and another base part provides a float layer having no emitter region. The gate element includes a gate electrode next to the channel layer and a dummy gate electrode next to the float layer. The float layer includes a first float layer adjacent to the channel layer and a second float layer apart from the channel layer. The dummy gate electrode and the first float layer are coupled with a first float wiring on the base layer. The dummy gate electrode is isolated from the second float layer.
|
申请公布号 |
US2011220962(A1) |
申请公布日期 |
2011.09.15 |
申请号 |
US201113115137 |
申请日期 |
2011.05.25 |
申请人 |
DENSO CORPORATION;FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD. |
发明人 |
KOYAMA MASAKI;OKABE YOSHIFUMI;ASAI MAKOTO;FUJII TAKESHI;YOSHIKAWA KOH |
分类号 |
H01L29/739 |
主分类号 |
H01L29/739 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|