发明名称 THIN FILM FORMING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a thin film forming device formable of a thin film in a short time by enhancing plasma generation density when forming the thin film on a substrate by using plasma. <P>SOLUTION: The thin film forming device for forming the thin film on the substrate comprises: a film deposition container provided with a deposition space for forming the thin film on the substrate in an evacuated state; a starting gas introduction part for introducing a starting gas for thin film into the deposition space in the film deposition container; and a plasma electrode part for generating plasma by using the starting gas for thin film in the deposition space. The plasma electrode part is made of a sheet member in which an electric current flows from one side edge surface to the other side edge surface, wherein a first principal plane of the sheet member faces the deposition space and, on the first principal surface, an electrode plate provided with a plurality of groove-like recessed parts extended along the direction in which the electric current flows is disposed as an electrode for plasma generation. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011179096(A) 申请公布日期 2011.09.15
申请号 JP20100046854 申请日期 2010.03.03
申请人 MITSUI ENG & SHIPBUILD CO LTD 发明人 TAKIZAWA KAZUKI;MIYATAKE NAOMASA;MURATA KAZUTOSHI
分类号 C23C16/509;H01L21/205;H05H1/46 主分类号 C23C16/509
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