| 摘要 |
A semiconductor device has a substrate, a gate electrode, a insulating layer containing silicon nitride, a silicon layer containing crystalline silicon and amorphous silicon, a contact layer, and source and drain electrodes layered in this order. The volume content ratio of crystalline silicon in the silicon layer has a gradient increasing toward the source and drain electrodes and decreasing toward the substrate. The gate insulating layer and the silicon layer sandwich a silicon-oxide-containing layer therebetween.
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